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inchange semiconductor product specification silicon pnp power transistors 2SB509 description ? with to-66 package ? complement to type 2sd315 applications ? for use in audio frequency power amplifier application pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i cm collector current-peak -10 a p c collector power dissipation t c =25 ?? 35 w t j junction temperature 150 ?? t stg storage temperature -40~150 ?? fig.1 simplified outline (to-66) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB509 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -60 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.2a -1.0 v v be base-emitter on voltage i c =-1a ; v ce =-2v -1.5 v i cbo collector cut-off current v cb =-20v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-4v; i c =0 -1.0 ma h fe-1 dc current gain i c =-1a ; v ce =-2v 40 320 h fe-2 dc current gain i c =-0.1a ; v ce =-2v 40 f t transition frequency i c =-0.5a ; v ce =-5v 8 mhz ? h fe-1 classifications c d e f 40-80 60-120 100-200 160-320
inchange semiconductor product specification 3 silicon pnp power transistors 2SB509 package outline fig.2 outline dimensions

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